کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10640176 | 995876 | 2005 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
DLTS and PL study of defects in InAlAs/InP heterojunctions grown by metal organic chemical vapor deposition
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: DLTS and PL study of defects in InAlAs/InP heterojunctions grown by metal organic chemical vapor deposition DLTS and PL study of defects in InAlAs/InP heterojunctions grown by metal organic chemical vapor deposition](/preview/png/10640176.png)
چکیده انگلیسی
Deep level transient spectroscopy (DLTS) and photoluminescence (PL) techniques are used to study the defects present in InAlAs/InP layers grown by metal organic chemical vapor deposition (MOCVD). In DLTS technique, different reverse bias and different heights and widths of the filling pulse are applied to the samples; the measurements have revealed the presence of four defects labelled A-D, which are found to be in a good agreement with the results of the photoluminescence (PL) technique. In fact, a detailed study of the defect (D) by photoluminescence (PL) technique has led to the same results as those determined by DLTS.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science and Engineering: B - Volume 116, Issue 2, 25 January 2005, Pages 202-207
Journal: Materials Science and Engineering: B - Volume 116, Issue 2, 25 January 2005, Pages 202-207
نویسندگان
S. Bouzgarrou, M.M. Ben Salem, F. Hassen, A. Kalboussi, A. Souifi,