Keywords: DLTS; Laplace DLTS; Defects; Carbon; Hydrogen;
مقالات ISI (ترجمه نشده)
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Keywords: DLTS; Defects; Silicon; Carbon; Oxygen;
Keywords: Implantation; Contamination; DLTS; Tungsten
Keywords: Germanium; ILM; Discrete breathers; Quodons; Defects; DLTS;
Keywords: Contamination; Implantation; Molybdenum; Tungsten; DLTS
Keywords: Germanium; DLTS; Defect; Anneal; Diffusion
Keywords: Radiation damage; DLTS; Vacancy; Cluster; Single ion implantation;
Keywords: Deep-Level Transient Spectroscopy; DLTS; Defects; Low rate DLTS; Optical DLTS; ODLTS
Keywords: Irradiation; Quantum dots; DLTS; Accumulation peak
Synergistic effects of NPN transistors caused by combined proton irradiations with different energies
Keywords: Bipolar junction transistors; DLTS; Protons; Radiation effect; Ionization damage; Displacement damage;
Annealing of the Sb-vacancy and a closely related radiation induced defect in n-type germanium
Keywords: Sb-vacancy; DLTS; Germanium; Annealing rate; Annealing energies;
Characterisation of Cs ion implanted GaN by DLTS
Keywords: GaN; Cs implantation; Defect; DLTS;
C-DLTS interface defects in Al0.22Ga0.78N/GaN HEMTs on SiC: Spatial location of E2 traps
Keywords: Hysteresis effect; AlGaN/GaN HEMT; Interface defects; DLTS;
Study of γ-ray irradiation influence on TiN/HfO2/Si MOS capacitor by C-V and DLTS
Keywords: TiN/HfO2/Si MOS capacitor; γ-ray irradiation; Oxide trapped and interface trapped; C-V; DLTS;
Electrical characterization of electron irradiated and annealed lowly-doped 4H-SiC
Keywords: 4H-SiC; Schottky contacts; High energy electron irradiation; DLTS;
Formation and evolution of E3 centers in hydrothermally grown zinc oxide
Keywords: Defects; ZnO; DLTS; Implantation;
Effects of negative bias stress on trapping properties of AlGaN/GaN Schottky barrier diodes
Keywords: DLTS; Defects; GaN; Schottky barrier diode; Trap levels; Stress;
Evidence of minority carrier traps contribution in deep level transient spectroscopy measurement in n-GaN Schottky diode
Keywords: DLTS; Carrier traps; GaN; Schottky diode;
Deep traps in the ZnO nanorods/Si solar cells
Keywords: ZnO; Nanorods; DLTS; Surface states; Supralinear photoconductivity;
Response of Ni/4H-SiC Schottky barrier diodes to alpha-particle irradiation at different fluences
Keywords: DLTS; Free carrier removal rate; Carrier concentration; 4H-SiC; Alpha-particle irradiation
The effect of high temperatures on the electrical characteristics of Au/n-GaAs Schottky diodes
Keywords: Barrier height; Annealing; DLTS; GaAs; EL2 defect;
Vacancy-related defects in n-type Si implanted with a rarefied microbeam of accelerated heavy ions in the MeV range
Keywords: Ion implantation; Silicon; Defects; Vacancy; DLTS;
Electrical characterization of defects introduced during electron beam deposition of W Schottky contacts on n-type 4H-SiC
Keywords: 4H-SiC; Defects; DLTS; Annealing; Electron beam deposition;
Electrical characterization of deep levels created by bombarding nitrogen-doped 4H-SiC with alpha-particle irradiation
Keywords: DLTS; 4H-SiC; Alpha-particle irradiation; Annealing; Schottky barrier diode
Effect of Interface Trap States on Optical Barrier Height of NiSi/Si Infrared Detector
Keywords: Infrared sensor; Nickel silicide; Interface trap states; DLTS;
Correlation between electrical parameters and defect states of polythiophene:fullerene based solar cell
Keywords: Organic solar cell; P3HT; PCBM; Degradation; Photo-oxidation; Defect states; DLTS
The effects of gamma irradiation on neutron displacement sensitivity of lateral PNP bipolar transistors
Keywords: Lateral PNP bipolar transistor; Neutron displacement effects; Gamma irradiation; Gain degradation; DLTS;
Stability of Cu(In,Ga)Se2 solar cells: A literature review
Keywords: a-Si:H; hydrogenated amorphous silicon; AFM; atomic force microscope; ALD; atomic layer deposition; ALT; accelerated lifetime testing; CBD; chemical bath deposition; CIGS; Cu(In,Ga)Se2; CIGSSe; Cu(In,Ga)(Se,S)2; CIS; CuInSe2; CISSe; CuIn(Se,S)2; CTE; coef
Effects of 5.4 MeV alpha-particle irradiation on the electrical properties of nickel Schottky diodes on 4H–SiC
Keywords: Irradiation; DLTS; 4H–SiC; Defects; Alpha-particles
Effects and mechanisms of RIE on SiC inversion layer mobility and its recovery
Keywords: 4H-SiC; RIE; Hydrogen etching; DLTS;
Characterisation of the effect of surface passivation with SiO2/SiN on deep levels in AlGaN/GaN/Si HEMTs
Keywords: Al0.26Ga0.73N/GaN/Si; Passivation; C–V; I–V; Surface states; Deep levels; DLTS
Investigation of the effects of gamma radiation on the electrical properties of dilute GaAs1−xNx layers grown by Molecular Beam Epitaxy
Keywords: Dilute III-V nitride; Gamma (γ-) irradiation; IV; DLTS; Laplace DLTS
Rapid thermal annealing: An efficient method to improve the electrical properties of tellurium compensated Interfacial Misfit GaSb/GaAs heterostructures
Keywords: Rapid thermal annealing; Furnace annealing; IV; CV; DLTS;
Characterization of deep electron traps in 4H-SiC Junction Barrier Schottky rectifiers
Keywords: Silicon carbide; 4H-SiC; JBS rectifier; Deep electron traps; DLTS
Transition metals (Ti and Co) in silicon and their complexes with hydrogen: A Laplace DLTS study
Keywords: DLTS; Titanium; Cobalt; Silicon; High-resolution Laplace DLTS
A study on multiple defect states in low-carbon doped GaN layers and its correlation with AlGaN/GaN high electron mobility transistor operation
Keywords: Carbon doping; AlGaN/GaN HEMT; Current collapse; DLTS; Trap;
Correlation between barrier inhomogeneities of 4H-SiC 1 A/600 V Schottky rectifiers and deep-level defects revealed by DLTS and Laplace DLTS
Keywords: 4H-SiC; Deep-level defects; I–V; C–V; DLTS; LDLTS
Deep level defects in ZnO
Keywords: II-VI compounds; ZnO; Defects; Doping; Photoluminescence; DLTS
Electrical characterization and DLTS analysis of a gold/n-type gallium nitride Schottky diode
Keywords: Nitrides; MOVPE; GaN; Schottky diode; DLTS;
Dark current suppression of amorphous selenium based photosensors by the ZnO hole blocking layer
Keywords: Zinc oxide; Amorphous Se; Hole blocking layer; Oxygen vacancy; DLTS;
Properties of HfO2/ultrathin SiO2/Si structures and their comparison with Si MOS structures passivated in KCN solution
Keywords: Monoclinic HfO2 phase; Passivation; KCN; Interface defect states; FTIR; DLTS;
Proximity gettering of slow diffuser contaminants in CMOS image sensors
Keywords: Contamination; Gettering; Image sensors; Dark current; DLTS
Capacitance study of carrier inversion at the amorphous/crystalline silicon heterojunction passivated by different thicknesses of i-layer
Keywords: Solar cell; Amorphous-crystalline silicon heterostructure; DLTS; Carrier inversion; Passivation;
Electrical and optical characterization of the influence of chemical bath deposition time and temperature on CdS/Cu(In,Ga)Se2 junction properties in Cu(In,Ga)Se2 solar cells
Keywords: CIGS solar cell; CBD-CdS; Recombination; Photoluminescence; Metastability; DLTS;
Investigation of ion beam induced radiation damage in Si PN diodes
Keywords: Radiation effects; Ion beam induced charge; Displacement damage; Semiconductors; DLTS;
Effect of electron and proton irradiation on recombination centers in GaAsN grown by chemical beam epitaxy
Keywords: Chemical beam epitaxy; DLTS; Irradiation; Hydrogenation; GaAsN
Capacitance–voltage and current–voltage characteristics for the study of high background doping and conduction mechanisms in GaAsN grown by chemical beam epitaxy
Keywords: GaAsN; Current–voltage; Capacitance–voltage; DLTS; Recombination; Background doping
Direct-current and radio-frequency characteristics of passivated AlGaN/GaN/Si high electron mobility transistors
Keywords: AlGaN/GaN/Si HEMTs; DLTS; Pulsed current–voltage; Small-signal microwave; Passivation; Gate-lag and drain-lag; Electron traps
dc-Hydrogen plasma induced defects in bulk n-Ge
Keywords: Ge; Hydrogen passivation; Defects; DLTS; L-DLTS
Reconfigurations and diffusion of trivacancy in silicon
Keywords: Silicon; Trivacancy; Diffusion; DLTS; ab-initio modeling