کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7941427 | 1513200 | 2017 | 18 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Evidence of minority carrier traps contribution in deep level transient spectroscopy measurement in n-GaN Schottky diode
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
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چکیده انگلیسی
It is shown that deep level transient spectroscopy can be carried out on Schottky diodes to investigate, in addition to majority carrier traps, minority carrier traps. This is possible thanks to the application of a large reverse bias to the device which allows minority carrier injection by lowering their corresponding effective Schottky barrier height. Indeed, when increasing the reverse bias voltage, the deep level transient spectroscopy signal, initially negative and thus showing only majority carrier traps signature, becomes positive, revealing minority carrier traps involvement. A careful analysis of the recorded spectra leads to the identification of four minority carrier traps which have been so far only evidenced using dedicated technique such as minority carrier transient spectroscopy.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Superlattices and Microstructures - Volume 101, January 2017, Pages 529-536
Journal: Superlattices and Microstructures - Volume 101, January 2017, Pages 529-536
نویسندگان
S. Amor, A. Ahaitouf, Az Ahaitouf, J.P. Salvestrini, A. Ougazzaden,