کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
7941427 1513200 2017 18 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Evidence of minority carrier traps contribution in deep level transient spectroscopy measurement in n-GaN Schottky diode
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
Evidence of minority carrier traps contribution in deep level transient spectroscopy measurement in n-GaN Schottky diode
چکیده انگلیسی
It is shown that deep level transient spectroscopy can be carried out on Schottky diodes to investigate, in addition to majority carrier traps, minority carrier traps. This is possible thanks to the application of a large reverse bias to the device which allows minority carrier injection by lowering their corresponding effective Schottky barrier height. Indeed, when increasing the reverse bias voltage, the deep level transient spectroscopy signal, initially negative and thus showing only majority carrier traps signature, becomes positive, revealing minority carrier traps involvement. A careful analysis of the recorded spectra leads to the identification of four minority carrier traps which have been so far only evidenced using dedicated technique such as minority carrier transient spectroscopy.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Superlattices and Microstructures - Volume 101, January 2017, Pages 529-536
نویسندگان
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