کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
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1810669 | 1025567 | 2012 | 4 صفحه PDF | دانلود رایگان |
Bulk antimony doped germanium (n-Ge) has been exposed to a dc–hydrogen plasma. Capacitance–voltage depth profiles revealed extensive near surface passivation of the shallow donors as evidenced by ∼a 1.5 orders of magnitude reduction in the free carrier concentration up to depth of ∼3.2 μm. DLTS and Laplace-DLTS revealed a prominent electron trap 0.30 eV below the conduction (EC –0.30 eV). The concentration of this trap increased with plasma exposure time. The depth profile for this defect suggested a uniform distribution up to 1.2 μm. Annealing studies show that this trap, attributed to a hydrogen-related complex, is stable up to 200 °C. Hole traps, or vacancy-antimony centers, common in this material after high energy particle irradiation, were not observed after plasma exposure, an indication that this process does not create Frenkel (V–I) pairs.
Journal: Physica B: Condensed Matter - Volume 407, Issue 15, 1 August 2012, Pages 2935–2938