کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
6945760 | 1450519 | 2018 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Synergistic effects of NPN transistors caused by combined proton irradiations with different energies
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی کامپیوتر
سخت افزارها و معماری
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چکیده انگلیسی
There are a large number of protons with different energies from the dozens of keV to hundreds of MeV in space environment, which simultaneously act on the bipolar junction transistors (BJTs), and induce different irradiation effect and damage defects. Moreover, interaction between displacement defects and ionization defects occurs. In the paper, the interaction mechanisms between oxide charge and displacement defects in 3DG112 NPN BJTs caused by the combined 70â¯keV and 170â¯keV protons with 5â¯MeV proton irradiation are studied. Experimental results show the degradation of current gain increases linearly with increasing the irradiation fluence of the 170â¯keV and 5â¯MeV protons, but increases nonlinearly for the 70â¯keV protons, implying that the 170â¯keV and 5â¯MeV protons mainly induce displacement damage on the NPN BJTs, while the 70â¯keV protons cause ionization damage. It can be seen from the Geant4 calculation that 70â¯keV and 170â¯keV protons cause almost the same ionization damage on the 3DG112 transistors, while have significant difference in displacement damage ability, which is favorable to analyze the effect of displacement damage in oxide layer of NPN BJTs induced by 170â¯keV and 70â¯keV protons on ionization damage caused by the subsequent 5â¯MeV protons. DLTS analyses show that 5â¯MeV protons produce mainly displacement defect centers in based-collector junction of 3DG112 transistors, and 170â¯keV and 70â¯keV protons only induce almost the same number of the oxide trapped charges. While the combined irradiation can produce the more oxide trapped charges, except displacement defects, showing that displacement damage in oxide layer caused by 170â¯keV and 70â¯keV protons can increase the oxide trapped charges during the subsequent 5â¯MeV exposures. Moreover, the more displacement defects in oxide layer will induce more oxide trapped charges, and give more enhanced synergistic effects. These results will help to assess the reliability of BJTs in the space radiation environment.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Reliability - Volume 82, March 2018, Pages 130-135
Journal: Microelectronics Reliability - Volume 82, March 2018, Pages 130-135
نویسندگان
Xingji Li, Jianqun Yang, Chaoming Liu, Gang Bai, Wenbo Luo, Pengwei Li,