Keywords: آسیب جابجایی; Irradiation hardening; Surface acoustic wave; Helium; Displacement damage; He/dpa; Austenitic stainless steel;
مقالات ISI آسیب جابجایی (ترجمه نشده)
مقالات زیر هنوز به فارسی ترجمه نشده اند.
در صورتی که به ترجمه آماده هر یک از مقالات زیر نیاز داشته باشید، می توانید سفارش دهید تا مترجمان با تجربه این مجموعه در اسرع وقت آن را برای شما ترجمه نمایند.
در صورتی که به ترجمه آماده هر یک از مقالات زیر نیاز داشته باشید، می توانید سفارش دهید تا مترجمان با تجربه این مجموعه در اسرع وقت آن را برای شما ترجمه نمایند.
Keywords: آسیب جابجایی; DPA; PHITS; Displacement damage; Monte Carlo calculation; Electron; Gamma ray;
Keywords: آسیب جابجایی; Deuterium absorption; Displacement damage; Deuterium implantation; Ionization irradiation; Desorption; Trapping;
Keywords: آسیب جابجایی; ZrO2; Sequential ion beam irradiation; Displacement damage; Tensile stress; Step height;
Keywords: آسیب جابجایی; Displacement damage; Defect annealing; Dark current; Photodiodes; Multiscale modeling
Keywords: آسیب جابجایی; Metallic multilayer; Neutron radiation; Displacement damage; PKA; H/He ratio
Keywords: آسیب جابجایی; Bipolar transistors; Radiation effects; Ion beam damage; Neutron damage; Displacement damage
Keywords: آسیب جابجایی; Displacement damage; Lifetime; Decay; Photoluminescence; Phosphors; Proton radiation
Keywords: آسیب جابجایی; ZrO2; Dual beam irradiation; Displacement damage; Tensile stress; Step height
Synergistic effects of NPN transistors caused by combined proton irradiations with different energies
Keywords: آسیب جابجایی; Bipolar junction transistors; DLTS; Protons; Radiation effect; Ionization damage; Displacement damage;
Primary knock on atom spectra, gas production and displacement cross section for tungsten and chromium irradiated with neutrons at energies up to 14.1â¯MeV
Keywords: آسیب جابجایی; Displacement damage; DPA; PKA of nuclear reactions; Nuclear reaction of DT neutrons; Tungsten and chromium; Gas production;
Investigation of total dose effects in SiGe HBTs under different exposure conditions
Keywords: آسیب جابجایی; SiGe HBT; Total dose effects; Ionization damage; Displacement damage;
Nuclear microprobe investigation of the effects of ionization and displacement damage in vertical, high voltage GaN diodes
Keywords: آسیب جابجایی; GaN; IBIC; Displacement damage;
Deuterium retention in tungsten simultaneously damaged by high energy W ions and loaded by D atoms
Keywords: آسیب جابجایی; Tungsten; Deuterium retention; Displacement damage; Neutral atoms; NRA;
Characteristics of p-i-n diodes basing on displacement damage detector
Keywords: آسیب جابجایی; Displacement damage; NIEL; P-i-n photodiode; Damage enhancement factor;
Displacement damage dose and implantation temperature effects on the trapping and release of deuterium implanted into SiC
Keywords: آسیب جابجایی; Deuterium implantation; SiC; Displacement damage; Thermal annealing; Hydrogen; Desorption; Trapping;
A Monte Carlo simulation code for calculating damage and particle transport in solids: The case for electron-bombarded solids for electron energies up to 900Â MeV
Keywords: آسیب جابجایی; Monte Carlo simulation; Electron radiation; Displacement damage; Amorphous solids;
A combination method for simulation of secondary knock-on atoms of boron carbide induced by neutron irradiation in SPRR-300
Keywords: آسیب جابجایی; Displacement damage; Binary collision; Primary knock-on atoms (PKAs); Secondary knock-on atoms (SKAs); SPRR-300
Medium-energy ion-beam simulation of the effect of ionizing radiation and displacement damage on SiO2-based memristive nanostructures
Keywords: آسیب جابجایی; Resistive switching; Ionizing radiation; Displacement damage; Ion-beam simulation; Radiation tolerance
Investigation of total ionizing dose effect and displacement damage in 65Â nm CMOS transistors exposed to 3Â MeV protons
Keywords: آسیب جابجایی; 3Â MeV protons; Total ionizing dose effect; Displacement damage; 65Â nm CMOS;
Preliminary studies on the emulation of 14Â MeV neutron irradiation in SiC with heavy ions
Keywords: آسیب جابجایی; 28.52.Fa; 61.80.Hg; 61.80.Jh; Silicon carbide; Fusion neutron; Heavy ion; Displacement damage;
Displacement damage from particle radiation in yttrium borate phosphor doped with cerium(III) or europium(III)
Keywords: آسیب جابجایی; Displacement damage; Photoluminescence; Phosphor;
Impact of bias conditions on performance degradation in SiGe HBTs irradiated by 10Â MeV Br ion
Keywords: آسیب جابجایی; Bias dependence; Displacement damage; Swift heavy ion; SiGe HBTs;
Investigation of ion beam induced radiation damage in Si PN diodes
Keywords: آسیب جابجایی; Radiation effects; Ion beam induced charge; Displacement damage; Semiconductors; DLTS;
Equivalence of displacement radiation damage in superluminescent diodes induced by protons and heavy ions
Keywords: آسیب جابجایی; Superluminescent diodes; Displacement damage; Equivalence of radiation damage; Degradation of optical power
Irradiation effects of 25 MeV silicon ions on SiGe heterojunction bipolar transistors
Keywords: آسیب جابجایی; Swift heavy ion; SiGe HBT; Irradiation effect; Displacement damage
Focal plane damage analysis by the space radiation environment in Aura satellite orbit
Keywords: آسیب جابجایی; Trapped proton; Solar proton; OMI; Secondary; Space radiation; MCNPX; SRIM; Displacement damage;
Combined effect of bias and annealing in gamma and neutron radiation assurance tests of SiGe bipolar transistors for HEP applications
Keywords: آسیب جابجایی; Radiation effects; SiGe HBT; Bias effects; Gamma irradiation; Neutron irradiation; Ionization damage; Displacement damage;
Radiation effects on silicon bipolar transistors caused by 3-10Â MeV protons and 20-60Â MeV bromine ions
Keywords: آسیب جابجایی; Bipolar transistors; Radiation effects; Ionization damage; Displacement damage; Gain degradation;
Capacitor-based isolation amplifiers for harsh radiation environments
Keywords: آسیب جابجایی; COTS; Displacement damage; Isolation amplifiers; Total ionising dose (TID)
Performance, reliability, radiation effects, and aging issues in microelectronics – From atomic-scale physics to engineering-level modeling
Keywords: آسیب جابجایی; MOSFET; Reliability; Hydrogen; NBTI; Radiation effects; ELDRS; Mobilities; Aging; Displacement damage
Nuclear responses in IFMIF creep-fatigue testing machine
Keywords: آسیب جابجایی; IFMIF; Creep-fatigue machine; Displacement damage; Heat deposition
Radiation hardness evaluation of SiGe HBT technologies for the Front-End electronics of the ATLAS Upgrade
Keywords: آسیب جابجایی; 07.89.+b; 85.30.Pq; 29.90.+r; 07.50.−eRadiation effects; Ionization damage; Displacement damage; Hardness assurance; SiGe; SiGe HBT
An algorithm for computing screened Coulomb scattering in Geant4
Keywords: آسیب جابجایی; 34.50; 34.50.B; 61.85; 02.50.N; 02.70.L; Geant4; Screened scattering; Coulomb scattering; Elastic recoil; Nuclear stopping power; NIEL, Non-Ionizing Energy Loss; TRIM; SRIM; Displacement damage;