Investigation of ion beam induced radiation damage in Si PN diodes

Ion Beam Induced Charge (IBIC) and Deep Level Transient Spectroscopy (DLTS) were used to investigate displacement damage caused by MeV energy ion beams in Si diodes. The devices were irradiated with 3 MeV Si ions to create displacement damage and a 2 MeV He ion beam was used for IBIC. The IBIC signal deterioration was measured as the function of the ion fluence and DLTS was used to identify the defects and their quantities. We used a new calculation method based on previous work by Fizzotti et al. [9] and more recently by Vittone [10] to determine the fraction of the active traps that affect the lifetime. The first application of this method is presented in this paper.