Combined effect of bias and annealing in gamma and neutron radiation assurance tests of SiGe bipolar transistors for HEP applications

► We study advanced SiGe bipolar devices irradiated in different bias configurations. ► Less damage seen with gammas in biased devices than in shorted or floating ones. ► Annealing differences are not enough to compensate the bias damage differences. ► Floating configuration should be avoided in gamma irradiations. ► Bias effects have not been observed in neutron irradiations.