Investigation of total ionizing dose effect and displacement damage in 65Â nm CMOS transistors exposed to 3Â MeV protons

The paper reports the 65 nm CMOS transistors exposed to 3 MeV protons to study the total ionizing dose (TID) effect and displacement damage (DD). The proton fluence of 7×1014 p/cm2 is equivalent to 9.5 MGy(SiO2) total dose and 7.7×1015 n/cm2 1 MeV neutron equivalent fluence. Under this unprecedented hostile environment, we observed that the degradation of 65 nm CMOS transistors was mainly due to TID effect. Additional results from 10 keV X-ray irradiation implied no visible DD-induced degradation could be observed even for this extremely high proton fluence.