کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
853477 | 1470686 | 2016 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Effect of Interface Trap States on Optical Barrier Height of NiSi/Si Infrared Detector
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موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی (عمومی)
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چکیده انگلیسی
In this paper, influence of interface trap states on barrier height of NiSi/Si Schottky diode is presented. The proposed study is important in view of its application potential as an infrared detector. This involves preparation of silicide by depositing 10 nm thick nickel on n-Si, followed by rapid thermal annealing at 500 0C in argon ambience. The thickness of the silicide was measured by cross-sectional HRTEM and found to be 24 nm. The zero bias barrier heights were measured by current-voltage and optical techniques, and were found to be 0.62 eV and 0.54 eV respectively. This discrepancy in barrier height is attributed to the presence of acceptor like interface trap state which was identified by DLTS technique.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Procedia Engineering - Volume 140, 2016, Pages 203-208
Journal: Procedia Engineering - Volume 140, 2016, Pages 203-208
نویسندگان
Sandipta Roy, Siddartha P. Duttagupta, Ramakrishnan Desikan,