Effects and mechanisms of RIE on SiC inversion layer mobility and its recovery

We report the use of hydrogen annealing to implement the substantial recovery of the a-face (112¯0) crystal structure and the 4H SiC MOSFET inversion layer mobility following material degradation by reactive ion etching (RIE). The results impact the processing of SiC trench MOSFETs where the a-face sidewall forms a significant portion of the conducting semiconductor channel.