کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10640200 | 995877 | 2005 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Microstructure and electrical properties of niobium doped Bi4Ti3O12 layer-structured piezoelectric ceramics
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Layer-structured Bi4Ti3âxNbxO12+x/2 (BiTN) ceramics, where x = 0.02-0.20, have been prepared by the conventional sintering technique. XRD results reveal the existence of an orthorhombic structure. The grain size decreases gradually and grain growth anisotropy is limited when x increases. The domain structures of BiTN ceramics differ on x. Nb5+ donor doping decreases markedly electrical conductivity of the materials and Tc shifts gradually to lower temperatures. In addition, low dielectric losses and good temperature stability of dielectric constant are obtained in a wide temperature range. Ferroelectric hysteresis loops of the materials are also determined on x. The best properties can be found in x = 0.08 and 0.11, indicating lower electrical conductivity, good temperature stability of dielectric properties and adequate piezoelectric properties.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science and Engineering: B - Volume 116, Issue 1, 15 January 2005, Pages 99-103
Journal: Materials Science and Engineering: B - Volume 116, Issue 1, 15 January 2005, Pages 99-103
نویسندگان
Lina Zhang, Ruiqing Chu, Suchuan Zhao, Guorong Li, Qingrui Yin,