کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10640232 | 995880 | 2005 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Indium selenide (In2Se3) thin film for phase-change memory
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Indium selenide (In2Se3) thin film for phase-change memory Indium selenide (In2Se3) thin film for phase-change memory](/preview/png/10640232.png)
چکیده انگلیسی
The static mode switching (dc test) is tested for the 5 μm-sized In2Se3 PRAM device. In the first sweep, the as-grown amorphous In2Se3 resistor showed the high resistance state at low voltage region. However, when it reached the threshold voltage, the electrical resistance of the device was drastically reduced through the formation of an electrically conducting path. The pulsed mode switching of the 5 μm-sized In2Se3 PRAM device shows that the reset (crystalline â amorphous) of the device was done with a 70 ns-3.1 V pulse and the set (amorphous â crystalline) of the device was done with a 10 μs-1.2 V pulse. As high as 100 of switching dynamic range (ratio of Rhigh to Rlow) was observed.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science and Engineering: B - Volume 119, Issue 2, 25 May 2005, Pages 196-201
Journal: Materials Science and Engineering: B - Volume 119, Issue 2, 25 May 2005, Pages 196-201
نویسندگان
Heon Lee, Dae-Hwan Kang, Lung Tran,