Sputtering-growth of Cu/Zn alloy nanofilms on acrylics substrate

Sputtering-growth of Cu/Zn nanofilms on acrylics substrate has been investigated. Through experimental investigation of the effect of sputtering voltage, target-to-substrate distance, chamber pressure and sputtering time on the concentration, growth rate and surface morphology of Cu/Zn alloy nanofilms, it is found that Cu concentration in Cu/Zn alloy nanofilms change by no more than 6.23 wt.% compared with Cu/Zn alloy target. High sputtering voltage and short target-to-substrate distance can improve the growth rate of alloy film. There exist an optimal chamber pressure where growth rate reaches to a maximum value. Low sputtering voltage, high target-to-substrate distance and low chamber pressure are vital to prepare high-quality alloy nanofilms. The Cu/Zn alloy film prepared under the condition of sputtering voltage 1.6 kV, target-to-substrate distance 2.5 cm, chamber pressure 10 Pa and sputtering time 20 min, possessed high qualities, such as smooth and uniform surface, thickness 41 nm and Cu concentration 71.0 wt.%.