کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10640267 | 995882 | 2005 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Dielectric properties of Ti-doped K(Ta,Nb)O3 thin films grown by pulsed laser deposition
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Dielectric properties of Ti-doped K(Ta,Nb)O3 thin films grown by pulsed laser deposition Dielectric properties of Ti-doped K(Ta,Nb)O3 thin films grown by pulsed laser deposition](/preview/png/10640267.png)
چکیده انگلیسی
We have investigated the growth and dielectric properties of K(Ta,Nb)O3 films doped with Ti. Titanium (+4) substitution on the group V (Nb/Ta) site should introduce an acceptor state, thus reducing dielectric losses due to defect-induced donor states. Using 3% Ti-doped targets, K(Ta,Nb)O3:Ti films were grown on MgO(0Â 0Â 1) crystals using pulsed-laser deposition. A reduction in the loss tangent was observed for Ti-doped K(Ta,Nb)O3 relative to undoped films, although a reduction in tunability is also seen. The crystallinity, morphology, dielectric constant, and tunability of K(Ta,Nb)O3:Ti films are reported.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science and Engineering: B - Volume 117, Issue 1, 25 February 2005, Pages 87-91
Journal: Materials Science and Engineering: B - Volume 117, Issue 1, 25 February 2005, Pages 87-91
نویسندگان
Hyung-jin Bae, Jennifer Sigman, David P. Norton, Lynn Boatner,