کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10653350 | 1002869 | 2005 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Metal-insulator transition induced by the magnetic field in n-type GaSb
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
دانش مواد (عمومی)
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Metal-insulator transition induced by the magnetic field in n-type GaSb Metal-insulator transition induced by the magnetic field in n-type GaSb](/preview/png/10653350.png)
چکیده انگلیسی
The metal-insulator (MI) transition induced by a magnetic field was evidenced for the first time in compensated n-type GaSb layers grown by molecular beam epitaxy. The free electron densities were in the low 1016Â cmâ3 range or even slightly lower, so that the zero-field 3D electron gas was degenerate and, at the BMI magnetic field of the MI transition, it populates only the spin-split 0(+) Landau level (extreme quantum limit). On the metallic side of the MI transition a T1/3 dependence of the conductivity was assumed to fit the low-T data and to estimate the BMI value, which resulted of 9.1Â T in the purest sample. The MI transition manifests in a strong increase of the diagonal resistivity with the magnetic field, but not of the Hall coefficient, suggesting that the apparent electron density is practically constant, whereas the mobility varies strongly. The evidence of a maximum in the temperature dependence of the Hall coefficient has been explained through a two channels transport mechanism involving localized and extended states.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid State Communications - Volume 136, Issue 2, October 2005, Pages 126-131
Journal: Solid State Communications - Volume 136, Issue 2, October 2005, Pages 126-131
نویسندگان
C. Ghezzi, R. Magnanini, A. Parisini,