کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10653510 | 1002884 | 2005 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Photoreflectance study of energy level structure of self-assembled InAs/GaAs quantum dots emitting at 1.3 μm
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
دانش مواد (عمومی)
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Photoreflectance study of energy level structure of self-assembled InAs/GaAs quantum dots emitting at 1.3 μm Photoreflectance study of energy level structure of self-assembled InAs/GaAs quantum dots emitting at 1.3 μm](/preview/png/10653510.png)
چکیده انگلیسی
Photoreflectance and photoluminescence measurements were performed on the ensemble of self assembled InAs/GaAs quantum dots designed to emit at 1.3 μm. As many as six QDs-related optical transitions were observed in PR spectra, the energies of which were confirmed by high-excitation PL results. Numerical calculations allowed estimating the average size of the dots, which is larger than for standard InAs/GaAs QDs. This result is in agreement with structural data. Additionally, the energy level structure for such QDs was derived and compared with the electronic structure of standard InAs/GaAs dots. It was shown that the energy level structure of such large dots qualifies them for the active region of a laser emitting at 1.3 μm.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid State Communications - Volume 135, Issue 4, July 2005, Pages 232-236
Journal: Solid State Communications - Volume 135, Issue 4, July 2005, Pages 232-236
نویسندگان
W. Rudno-RudziÅski, K. Ryczko, G. SÄk, J. Misiewicz, M.J. da Silva, A.A. Quivy,