کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10653703 | 1002906 | 2005 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Evidence for fast decay dynamics of the photoluminescence from Ge nanocrystals embedded in SiO2
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
دانش مواد (عمومی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
We have investigated the origin of room temperature photoluminescence from ion-beam synthesized Ge nanocrystals (NCs) embedded in SiO2 using steady state and time-resolved photoluminescence (PL) measurements. Ge NCs of diameter 4-13Â nm were grown embedded in a thermally grown SiO2 layer by Ge+ ion implantation and subsequent annealing. Steady state PL spectra show a peak at â¼2.1Â eV originating from Ge NCs and another peak at â¼2.3Â eV arising from ion-beam induced defects in the SiO2 matrix. Time-resolved PL studies reveal double exponential decay dynamics on the nanoseconds time scale. The faster component of the decay with a time constant Ï1â¼3.1Â ns is attributed to the nonradiative lifetime, since the time constant reduces with increasing defect density. The slower component with time constant Ï2â¼10Â ns is attributed to radiative recombination at the Ge NCs. Our results are in close agreement with the theoretically predicted radiative lifetime for small Ge NCs.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid State Communications - Volume 133, Issue 4, January 2005, Pages 229-234
Journal: Solid State Communications - Volume 133, Issue 4, January 2005, Pages 229-234
نویسندگان
P.K. Giri, R. Kesavamoorthy, B.K. Panigrahi, K.G.M. Nair,