کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10666312 | 1007689 | 2005 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Examination of crystal defects with high-kV X-ray computed tomography
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
High resolution X-ray computed tomography (CT) is shown to be a useful technique for characterizing the defect known as scatter in Nd-doped yttrium orthovanadate (Nd:YVO4) single crystals. Scatter is identified by a dense cloud or rings of defects, which cause crystal inhomogeneity. Computed tomography indicated that the scattering sites were regions of low density. This result rules out micropieces of iridium and the segregation phases of V2O5 and Y2O3 as the main scattering centers. Transmission electron microscopy has shown, however, that inclusions are nonetheless present in regions of the crystal containing scatter. The major scattering defect in the crystal was determined to be microvoids which are approximately 10 μm in diameter.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Letters - Volume 59, Issue 10, April 2005, Pages 1113-1116
Journal: Materials Letters - Volume 59, Issue 10, April 2005, Pages 1113-1116
نویسندگان
J.B. LeBret, M.G. Norton, D.F. Bahr,