کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10668036 | 1008284 | 2014 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Selective secondary nucleation controlled (001)-texture in boron doped diamond films by increasing the concentrations of tetramethylsilane and trimethylborane
ترجمه فارسی عنوان
جداسازی هسته ای ثانویه کنترل شده (001) -استفاده در فیلم های الماس دوگانه بور با افزایش غلظت تترامتیل سیلان و ترتیبی متان
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
چکیده انگلیسی
Diamond shows anisotropic physical and chemical properties, depending on its crystallographic orientations. Owing to the lack of large-scale single crystalline diamond substrates, however, the growth of textured diamond film becomes a popular way in tailoring its optical, electrical, mechanical, and thermal properties for specific applications. In the present study, we show that the (001)-texture of boron doped diamond (BDD) thin film can be controlled by a selective secondary nucleation process. To achieve this, a low concentration of tetramethylsilane (TMS) was introduced to induce a high secondary nucleation rate on the non-{001} diamond facets, hindering their lateral growth. In contrast, the continuous growth and expansion of the {001} facets are kept, which leads to the formation of (001)-textured diamond film. In addition, the orientation of the film can be continuously improved by increasing the concentration of either TMS or trimethylborane (TMB) in the gas phase within a relatively large parameter window. This study not only presents a new mechanism in controlling the textured of diamond, but also sheds some light on the fundamental research regarding the diamond growth.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Surface and Coatings Technology - Volume 259, Part C, 25 November 2014, Pages 526-531
Journal: Surface and Coatings Technology - Volume 259, Part C, 25 November 2014, Pages 526-531
نویسندگان
Hao Zhuang, Haiyuan Fu, Xin Jiang,