کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10668490 | 1008373 | 2011 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
RF sputtering of ZnO films in Ar and Ar-H2 gas mixtures: Role of H incorporation in developing transparent conductive coatings
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
The introduction of hydrogen in the plasma phase strongly affected the structural, chemical and physical properties of the films. In particular a pronounced change in the film electrical behavior was observed which become conductive when H is added in the gas mixture ([H2]Â >Â 6%). The film transparency was on the other hand maintained. By combining XPS, ATR-FTIR and OES data we could correlate the established conductivity and its variations with intentional hydrogen incorporation in the crystal structure in the form of hydroxide species.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Surface and Coatings Technology - Volume 205, Supplement 2, 25 July 2011, Pages S218-S222
Journal: Surface and Coatings Technology - Volume 205, Supplement 2, 25 July 2011, Pages S218-S222
نویسندگان
G. Gottardi, R. Bartali, V. Micheli, V. Guarnieri, I. Luciu, P. Pu, R. Pandiyan, N. Laidani,