کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10668490 | 1008373 | 2011 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
RF sputtering of ZnO films in Ar and Ar-H2 gas mixtures: Role of H incorporation in developing transparent conductive coatings
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: RF sputtering of ZnO films in Ar and Ar-H2 gas mixtures: Role of H incorporation in developing transparent conductive coatings RF sputtering of ZnO films in Ar and Ar-H2 gas mixtures: Role of H incorporation in developing transparent conductive coatings](/preview/png/10668490.png)
چکیده انگلیسی
The introduction of hydrogen in the plasma phase strongly affected the structural, chemical and physical properties of the films. In particular a pronounced change in the film electrical behavior was observed which become conductive when H is added in the gas mixture ([H2]Â >Â 6%). The film transparency was on the other hand maintained. By combining XPS, ATR-FTIR and OES data we could correlate the established conductivity and its variations with intentional hydrogen incorporation in the crystal structure in the form of hydroxide species.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Surface and Coatings Technology - Volume 205, Supplement 2, 25 July 2011, Pages S218-S222
Journal: Surface and Coatings Technology - Volume 205, Supplement 2, 25 July 2011, Pages S218-S222
نویسندگان
G. Gottardi, R. Bartali, V. Micheli, V. Guarnieri, I. Luciu, P. Pu, R. Pandiyan, N. Laidani,