کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10668560 | 1008373 | 2011 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
The effect of disturbed PECVD electrode surfaces on the homogeneity of microcrystalline silicon films
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
In this work we present a novel electrode design for the plasma enhanced chemical vapor deposition of microcrystalline silicon thin films that enables optical access to the growing layer under normal incidence. The optical access is realized by piercing the electrode with a conical feed through of 10Â mm diameter at the electrode side facing the plasma. The influence of the feed through on deposition homogeneity is studied in different pressure regimes from 8Â mbar to 24Â mbar on intrinsic layers optimized for state of the art thin-film silicon solar cells. The homogeneity of the layers was determined by spatially resolved thickness measurements and evaluation of the crystalline volume fraction by Raman spectroscopy. With the aim to minimize the influence of the disturbance of the electrode surface the effect of different insets in the feed through on the homogeneity is studied. To find a maximum in optical transmission of the insets at optimal film homogeneity different designs of metallic grids were tested. We show that using the modified electrode it is possible to deposit microcrystalline silicon layers which are comparable in homogeneity to those fabricated with an unchanged standard electrode. This was achieved by covering only 19% of the area of the feed through by a metallic inset.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Surface and Coatings Technology - Volume 205, Supplement 2, 25 July 2011, Pages S415-S418
Journal: Surface and Coatings Technology - Volume 205, Supplement 2, 25 July 2011, Pages S415-S418
نویسندگان
S. Muthmann, M. Meier, R. Schmitz, W. Appenzeller, A. Mück, A. Gordijn,