کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10668750 | 1008463 | 2005 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Effects of annealing on the properties of indium-tin oxide films prepared by ion beam sputtering
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Effects of annealing on the properties of indium-tin oxide films prepared by ion beam sputtering Effects of annealing on the properties of indium-tin oxide films prepared by ion beam sputtering](/preview/png/10668750.png)
چکیده انگلیسی
ITO films were deposited by ion beam sputtering, and was favorable to have the ã100ã texture with the increase of annealing time. The oxygen content decreased with the increase of annealing time, corresponding to the increase of oxygen vacancies. The electrical conductivity was primarily due to the contribution of oxygen vacancies. The resistivity decreased to a minimum of 1.77Ã10â4 Ω cm at 450 V after annealing at 500 °C for 60 min, but increased with the further increase of ion beam voltage. The carrier concentration and mobility both increased due to annealing. The optical transmission in the visible region of ITO films increased after annealing, but only slightly increased with the increase of ion beam voltage.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Surface and Coatings Technology - Volume 192, Issue 1, 1 March 2005, Pages 106-111
Journal: Surface and Coatings Technology - Volume 192, Issue 1, 1 March 2005, Pages 106-111
نویسندگان
Ding-Fwu Lii, Jow-Lay Huang, Iau-Jiue Jen, Su-Shia Lin, Pavol Sajgalik,