Ion track structure calculations in silicon - Spatial and temporal aspects

Spatial and temporal characteristics of energy deposition events and electron-hole distributions as a result of the passage of energetic ions in silicon are studied using Monte Carlo simulations, for incident ion energies in the range of 0.5-100 MeV/amu. Ion track radii as function of the incident ion energy are presented. The range of ion energies and masses for possible melting in the track region is calculated. It is also found that it is not possible to separate between the temporal and spatial characteristics.