کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10674879 | 1010476 | 2011 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Orientation dependence of near-threshold damage production by electron irradiation of 4H SiC and diamond and outward migration of defects
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سطوح، پوششها و فیلمها
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Orientation dependence of near-threshold damage production by electron irradiation of 4H SiC and diamond and outward migration of defects Orientation dependence of near-threshold damage production by electron irradiation of 4H SiC and diamond and outward migration of defects](/preview/png/10674879.png)
چکیده انگلیسی
Low temperature photoluminescence measurements have been made on samples of 4H SiC and diamond irradiated in different crystallographic directions with electrons having energies close to the atomic displacement thresholds. The defects produced in the 4H SiC are found to show some differences from those predicted by molecular dynamics calculations and possible reasons for the differences are discussed. The discussion refers to results from earlier as well as new experiments on the outward migration of defects during irradiation. The results for the energy dependence of the damage introduced into <1Â 0Â 0>, <1Â 1Â 0> and <1Â 1Â 1> oriented diamond are evaluated and shown to be consistent with theory.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 269, Issue 14, 15 July 2011, Pages 1702-1706
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 269, Issue 14, 15 July 2011, Pages 1702-1706
نویسندگان
J.W. Steeds,