Sublimation epitaxy of 3C-SiC grown at Si- and C-rich conditions

► Sublimation epitaxy of 3C-SiC grown at Si- and C-rich conditions. ► Continuous 3C-SiC domains for the layer grown at Si-rich conditions. ► Hill and pit nature of 6H-SiC inclusions investigated by AFM. ► Higher intensity of the 3C-SiC 111 peak for 3C-SiC grown at Si-rich conditions.