Keywords: 3C-SiC; Heteroepitaxy; Hot-filament chemical vapor deposition; Raman spectroscopy; X-ray diffraction;
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Keywords: 68.37.Og; 61.05.Jâ; 81.70.Jb; 42.30.Va; Aberration-corrected transmission electron microscopy; Dynamical scattering; Image contrast; Atomic-column position; Atomic occupancy; 3C-SiC;
Keywords: Intermediate band; Silicon carbide; Solar cell; Photovoltaic; Boron; Doping; 3C-SiC; Cubic
A large pseudo-Hall effect in n-type 3C-SiC(1Â 0Â 0) and its dependence on crystallographic orientation for stress sensing applications
Keywords: Pseudo-Hall effect; 3C-SiC; Piezoresistive effect;
The (001) 3C SiC surface termination and band structure after common wet chemical etching procedures, stated by XPS, LEED, and HREELS
Keywords: 3C-SiC; XPS; LEED; HREELS; Band diagram; Wet chemical etching; Work function; Interface;
A novel and green fabrication of 3C-SiC nanowires from coked rice husk-silicon mixture and their photoluminescence property
Keywords: 3C-SiC; Fibre technology; Crystal structure; Crystal growth; Photoluminescence property;
Point defects production and energy thresholds for displacements in crystalline and amorphous SiC
Keywords: Threshold displacement energy; MD simulations; PKA and atom displacements; Frenkel pairs; TDE probability distributions; Tersoffâ¯+â¯ZBL potential; 3C-SiC; a-SiC;
Fabrication of Er/Tm/Yb/Y2O3 upconversion luminescence enhanced 3C-SiC composites as highly UV-Vis-NIR light responsive photocatalysts
Keywords: Er/Tm/Yb/Y2O3; Upconversion; 3C-SiC; Nanocrystals; Photocatalyst;
Elimination of double position domains (DPDs) in epitaxial ã111ã-3C-SiC on Si(111) by laser CVD
Keywords: 3C-SiC; Epitaxial growth; Elimination of double position domains (DPDs); Laser CVD;
Improved performance of 3CSiC photocathodes by using a pn junction
Keywords: 3C-SiC; Photocathode; pn junction; Solar-to-hydrogen energy conversion;
Molecular dynamics simulation in single crystal 3C-SiC under nanoindentation: Formation of prismatic loops
Keywords: Prismatic loop; 3C-SiC; Plasticity; Nanoindentation; Molecular dynamics;
(001) 3C SiC/Ni contact interface: In situ XPS observation of annealing induced Ni2Si formation and the resulting barrier height changes
Keywords: 3C-SiC; Nickel; Interface experiment; XPS; Barrier height; Band diagram;
Sublimation growth of bulk 3C-SiC using 3C-SiC-on-Si (1Â 0Â 0) seeding layers
Keywords: 3C-SiC; Quasi-bulk; Sublimation epitaxy; DPB free; Single crystalline; Stacking faults;
Carbonization and transition layer effects on 3C-SiC film residual stress
Keywords: 3C-SiC; Carbonization; CVD process; Voids; Stress;
Mapping the strain and tilt of a suspended 3C-SiC membrane through micro X-ray diffraction
Keywords: 3C-SiC; Membrane; Strain; Tilt; XRD
Vacancy effects on the formation of He and Kr cavities in 3C-SiC irradiated and annealed at elevated temperatures
Keywords: He and Kr cavities; Vacancy effect; High-temperature annealing; Ion irradiation; 3C-SiC;
Surface engineering of SiC via sublimation etching
Keywords: Sublimation; 6H-SiC; 4H-SiC; 3C-SiC; Sublimation etching;
High Reliability of MEMS Packaged Capacitive Pressure Sensor Employing 3C-SiC for High Temperature
Keywords: MEMS; Capacitive; 3C-SiC; O-ring; Sensitivity; Capacitance
Evaluation of 3C-SiC/Si residual stress and curvatures along different wafer direction
Keywords: 3C-SiC; Hetero-epitaxy; Wafer curvature
The influence of neutron-irradiation at low temperatures on the dielectric parameters of 3C-SiC
Keywords: 3C-SiC; Neutron irradiation; Infrared reflectance;
Characterization for N- and P-type 3C-SiC on Si (1 0 0) substrate with thermal anneal and pulsed excimer laser anneal
Keywords: 3C-SiC; FTIR; XRD; Raman; Pulsed excimer laser; Anneal;
Improvement of process parameters for polycrystalline silicon carbide low pressure chemical vapor deposition on 150Â mm silicon substrate using monomethylsilane as precursor
Keywords: Thin film characterization; Design of experiments; Chemical vapor deposition; Polycrystalline silicon carbide; Monomethylsilane; 3C-SiC;
Theoretical investigation of Lamb wave A0 mode in thin SiC/AlN membranes for sensing application in liquid media
Keywords: 3C-SiC; AlN; Lamb modes; Liquid environment
Direct formation of graphene layers on top of SiC during the carburization of Si substrate
Keywords: Graphene; 3C-SiC; Carburization; Lattice mismatch;
Sublimation epitaxy of 3C-SiC grown at Si- and C-rich conditions
Keywords: 3C-SiC; Sublimation heteroepitaxy; Morphology; AFM; HRXRD;
Facile thermal explosion synthesis and optical properties of Al-doped flatted 3C-SiC microcrystals with 4H-SiC quantum interlayers
Keywords: 3C-SiC; 4H-SiC; Al-doping; Optical properties; Quantum barrier structure;
Tensile mechanical behaviors of cubic silicon carbide thin films
Keywords: 3C-SiC; Molecular dynamics; Young's modulus; Fracture; Nanofilm;
Synthesis of nano-structured 3C-SiC by carbothermal reduction of silicon bearing gel and carbon soot
Keywords: 3C-SiC; Nano-material; Carbon soot; Sol–gel preparation; X-ray techniques
Structural properties of partial dislocation in 3C-SiC
Keywords: 3C-SiC; Edge dislocation; Partial dislocation; Core energy reconstruction; Mechanical properties; TB simulations
Observation and characterization of near-interface oxide traps in 3C-SiC MOS structures by quasi-static I–V method
Keywords: Silicon carbide; 3C-SiC; Oxide interface; Near-interface oxide traps density; Oxynitridation; Nitridation; RTP
Characterization of 3C-SiC micro-pillars on Si(100) substrate grown by vapor-liquid–solid process
Keywords: 3C-SiC; Vapor–liquid–solid process; Micro-pillars; Strain; Infrared Raman spectrocopy; Scanning electron miscoscopy; Transmission electron microscopy
Characterization of polycrystalline SiC films grown by HW-CVD using silicon tetrafluoride
Keywords: Hot-wire; CVD; 3C-SiC; SiF4; H2 dilution
Influence of gas pressure on low-temperature preparation and film properties of nanocrystalline 3C-SiC thin films by HW-CVD using SiH4/CH4/H2 system
Keywords: HW-CVD; 3C-SiC; Low-temperature deposition; Nanocrystal; Wide band gap material;
Hetero- and homo-epitaxial growth of 3C-SiC for MOS-FETs
Keywords: 3C-SiC; Anti-phase boundary; Stacking fault; MOS-FET; pn junction, Homo-epitaxy; Hetero-epitaxy
Unusual defects in silicon carbide thin films grown by multiple or interrupted growth technique
Keywords: 3C-SiC; Defects; HMDS; CVD; Interrupted growth; Voids; 3C-SiC nanowires
Optical properties of cubic SiC grown on Si substrate by chemical vapor deposition
Keywords: 3C-SiC; Si; Chemical vapor deposition; Photoluminescene; Raman scattering; Fourier transform infrared spectroscopy
5 μm thick 3C-SiC layers grown on Ge-modified Si(100) substrates
Keywords: 3C-SiC; Germanium; Strain; Micro-Raman; CVD
Spatially resolved Raman spectroscopy evaluation of residual stresses in 3C-SiC layer deposited on Si substrates with different crystallographic orientations
Keywords: 81.15.Gh; 87.64.Je; Raman spectroscopy; CVD; 3C-SiC; Stress evaluation;
Bonding characteristics of 3C-SiC wafers with hydrofluoric acid for high-temperature MEMS applications
Keywords: 3C-SiC; Wafer bonding; PECVD oxide; HF; High temperature; MEMS;