کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1788097 | 1023459 | 2012 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Direct formation of graphene layers on top of SiC during the carburization of Si substrate
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موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
We grow graphene film on silicon substrates having various orientations by simple heating in the presence of carbon source gas. We observed that a 3C-SiC (111) film would form upon carburizing silicon with carbon deposited from a carbon source because it is well lattice-matched with Si (110) (less than 2%). Graphene grew on the buffer layer of 3C-SiC (111). The surface consists of hexagonal arrays that can act as a template for graphene growth. This simple and inexpensive method of forming graphene on silicon wafer in situ is compatible with silicon technology.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Current Applied Physics - Volume 12, Issue 4, July 2012, Pages 1088-1091
Journal: Current Applied Physics - Volume 12, Issue 4, July 2012, Pages 1088-1091
نویسندگان
Seong-Yong Cho, Hyun-Mi Kim, Min-Hyun Lee, Do-Joong Lee, Ki-Bum Kim,