کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1788097 | 1023459 | 2012 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Direct formation of graphene layers on top of SiC during the carburization of Si substrate
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موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Direct formation of graphene layers on top of SiC during the carburization of Si substrate Direct formation of graphene layers on top of SiC during the carburization of Si substrate](/preview/png/1788097.png)
چکیده انگلیسی
We grow graphene film on silicon substrates having various orientations by simple heating in the presence of carbon source gas. We observed that a 3C-SiC (111) film would form upon carburizing silicon with carbon deposited from a carbon source because it is well lattice-matched with Si (110) (less than 2%). Graphene grew on the buffer layer of 3C-SiC (111). The surface consists of hexagonal arrays that can act as a template for graphene growth. This simple and inexpensive method of forming graphene on silicon wafer in situ is compatible with silicon technology.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Current Applied Physics - Volume 12, Issue 4, July 2012, Pages 1088-1091
Journal: Current Applied Physics - Volume 12, Issue 4, July 2012, Pages 1088-1091
نویسندگان
Seong-Yong Cho, Hyun-Mi Kim, Min-Hyun Lee, Do-Joong Lee, Ki-Bum Kim,