کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
540206 | 871294 | 2006 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Unusual defects in silicon carbide thin films grown by multiple or interrupted growth technique
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی کامپیوتر
سخت افزارها و معماری
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چکیده انگلیسی
This paper discusses the growth and characterization of 3C-SiC films on Si (1 0 0) and (1 1 1) substrates using hexamethyldisilane (HMDS) as the source material in a resistance-heated furnace as well as the formation and microstructure of various types of unusual defects. Apart from common triangular and square voids, some unusual shaped voids like hexagonal, truncated octahedron, etc. and some irregular features (like hockey stick or pipes) were observed regularly, which are related to voids. SiC whiskers and wires with a wide range of diameters (nm to μm) were formed inside cracked regions as well as within voids. Optical microscopy, scanning electron microscopy (SEM) and Raman spectroscopy were used to study these features.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronic Engineering - Volume 83, Issue 1, January 2006, Pages 5–8
Journal: Microelectronic Engineering - Volume 83, Issue 1, January 2006, Pages 5–8
نویسندگان
A. Gupta, C. Jacob,