کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10706511 | 1023482 | 2005 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
A fully integrated fractional-N frequency synthesizer with a wideband VCO and a 3-bit 4th order Σ-Πmodulator for GSM/GPRS/EDGE applications
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
A fully integrated fractional-N frequency synthesizer (FNFS) in 0.5 μm SiGe BiCMOS technology is implemented. To cover wideband frequency operation, a switched capacitor bank LC tank VCO and an Adaptive Frequency Calibration (AFC) technique are used. A 3-bit 4th order Σ-Î modulator is used to reduce out-of-band phase noise and to meet a frequency resolution of less than 3 Hz, and agile switching time. The experimental results show â80 dBc/Hz in-band phase noise within the loop bandwidth of 25 kHz and â129 dBc/Hz out-of-band phase noise at 400 kHz-offset frequency. The fractional spurs are less than â70 dBc/Hz at 300 kHz offset frequency and the reference spur is â75 dBc/Hz. The lock time is less than 150 μs. The proposed synthesizer consumes 19.5 mA from a single 2.8 V supply voltage and meets the requirements of GSM/GPRS/EDGE applications.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Current Applied Physics - Volume 5, Issue 3, March 2005, Pages 259-264
Journal: Current Applied Physics - Volume 5, Issue 3, March 2005, Pages 259-264
نویسندگان
Han-il Lee, Tae-won Ahn, Je-Kwang Cho, Kun-seok Lee, Kyung-Suc Nah, Byeong-ha Park,