کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
10706511 1023482 2005 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
A fully integrated fractional-N frequency synthesizer with a wideband VCO and a 3-bit 4th order Σ-Δ modulator for GSM/GPRS/EDGE applications
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
A fully integrated fractional-N frequency synthesizer with a wideband VCO and a 3-bit 4th order Σ-Δ modulator for GSM/GPRS/EDGE applications
چکیده انگلیسی
A fully integrated fractional-N frequency synthesizer (FNFS) in 0.5 μm SiGe BiCMOS technology is implemented. To cover wideband frequency operation, a switched capacitor bank LC tank VCO and an Adaptive Frequency Calibration (AFC) technique are used. A 3-bit 4th order Σ-Δ modulator is used to reduce out-of-band phase noise and to meet a frequency resolution of less than 3 Hz, and agile switching time. The experimental results show −80 dBc/Hz in-band phase noise within the loop bandwidth of 25 kHz and −129 dBc/Hz out-of-band phase noise at 400 kHz-offset frequency. The fractional spurs are less than −70 dBc/Hz at 300 kHz offset frequency and the reference spur is −75 dBc/Hz. The lock time is less than 150 μs. The proposed synthesizer consumes 19.5 mA from a single 2.8 V supply voltage and meets the requirements of GSM/GPRS/EDGE applications.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Current Applied Physics - Volume 5, Issue 3, March 2005, Pages 259-264
نویسندگان
, , , , , ,