کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10717121 | 1027584 | 2005 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Simulation of Na, K, Cs and Cs(O) adsorption on GaAs(1Â 1Â 0) and (1Â 0Â 0) surfaces: towards predictable electronic structure of activation layer
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
ابزار دقیق
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
Ab-initio full-potential linearized augmented-plane-wave method is used to elucidate interaction of the surface states of a GaAs substrate with different adsorbates. Simulation of the electronic structure of clean ideal and relaxed GaAs (1Â 0Â 0) and (1Â 1Â 0) surfaces as well as surfaces with thin overlayers of alkali metals was performed to obtain the coverage dependence of the work function. Results are found to be in satisfactory agreement with experimental data. The role of oxygen during cesium adsorption is also studied. The formation of activation layer and its electronic structure are discussed.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment - Volume 536, Issue 3, 11 January 2005, Pages 295-301
Journal: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment - Volume 536, Issue 3, 11 January 2005, Pages 295-301
نویسندگان
S.E. Kulkova, D.V. Khanin, A.V. Subashiev,