کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10731498 | 1043250 | 2011 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Influence of 12Â MeV electron irradiation on the electrical and photovoltaic properties of Schottky type solar cell based on Carmine
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
تشعشع
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چکیده انگلیسی
A Schottky diode with configuration Au/Carmine/p-Si/Al has been fabricated and it has been seen that the thin film on the p-Si substrate has exhibited a good rectifying behavior. The current-voltage (I-V) characteristics of the device have been investigated in dark before electron irradiation and under white light illumination and after 12Â MeV electron irradiation with fluency of 3Ã1012Â eâ/cm2. It has been seen that the device is sensitive to illumination and to electron irradiation. The barrier height value has decreased under illumination. The ideality factor and series resistance values have increased by 12Â MeV electron irradiation. Furthermore, it has also seen that the reverse bias current and capacitance of the device have decreased after electron irradiation. This has been attributed to decrease in net ionized dopant concentration with electron irradiation.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Radiation Physics and Chemistry - Volume 80, Issue 8, August 2011, Pages 869-875
Journal: Radiation Physics and Chemistry - Volume 80, Issue 8, August 2011, Pages 869-875
نویسندگان
Å. AydoÄan, A. Türüt,