کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
11001686 | 1007993 | 2019 | 8 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Nonpolar p-contact layer based on AlGaN/GaN distributed Bragg reflector
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
The nonpolar a-plane Mg-doped p-type AlGaN/GaN distributed Bragg reflectors (DBRs) were grown for the first time with metal organic chemical vapor deposition technology. The structural, optical, and electrical properties of the nonpolar p-DBRs were characterized with various kinds of technical tools. The measurement results demonstrate that a stopband centered at 390â¯nm with a peak reflectivity of 55% was achieved. Meanwhile, a relatively high reflectivity (>35%) could also be obtained within the wavelength range of 270-320â¯nm for the nonpolar p-DBR which was intended to be a reflector with a working wavelength at 280â¯nm. Additionally, a hole concentration higher than 2â¯Ãâ¯1017â¯cmâ3 was obtained with the nonpolar p-DBRs.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Letters - Volume 235, 15 January 2019, Pages 116-119
Journal: Materials Letters - Volume 235, 15 January 2019, Pages 116-119
نویسندگان
Zili Wu, Xiong Zhang, Aijie Fan, Hu Chen, Jianguo Zhao, Shuai Chen, Shuchang Wang, Yiping Cui,