Comparative analysis on thermal effects of Si and HgCdTe irradiated by pulse laser

Melting thresholds of infrared semiconductor materials, which irradiated by pulsed laser, is simulated by using heat conduction equation. Specially, how the repetition frequency impacts on damage threshold of Si and HgCdTe is analyzed in detail. The temporal evolution rule of temperature in Si and HgCdTe induced by multi-pulsed laser with or without modulation is calculated. The impact of the pulse modulation parameters on damage thresholds of Si and HgCdTe are explored and discussed in detail. Results show that the damage threshold of Si is lower than which of HgCdTe when pulse repetition frequency is lower than 600 Hz. On the contrary, when the repetition frequency of the laser pulse is higher than 600 Hz, the damage threshold of HgCdTe is significantly lower than which of Si. When infrared materials are irradiated by modulated multi-pulse laser, the modulation parameters have greater impact on damage threshold of Si than which of HgCdTe.