کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
11005951 | 1498218 | 2018 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Investigation of resistive switching in PVP and ultra-thin HfOx based bilayer hybrid RRAM
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
الکتروشیمی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Hybrid CBRAM devices based on PVP/HfOx bilayer were investigated for their switching performance. A reliable and low voltage bipolar resistive switching operation was observed in these devices with repeatability of 300â¯cycles, Ion/Ioff of 80, set (Vset) and reset (Vreset) voltages of 1.03â¯V and â0.68â¯V, retention time of 7200â¯s, and switching endurance of >2000â¯cycles in devices with 2.5â¯wt% PVP concentration. Low device-to-device variation was observed with 10 devices tested showing nearly similar switching parameters. Weibull's distribution of Vset and Vreset voltages have indicated reliable switching performance in devices. The pinholes formation in PVP layer guides the confined growth and dissolution of Ag conductive filament (CF) in the bilayer structure resulting in a stable, reliable and low voltage switching operation. PVP film roughness and pinholes depth have shown downtrend with PVP concentration. During the set process, a CF formed across the electrodes constitutes of Ag atoms, due to pinholes assisted electro-migration of Ag ions. Whereas in the reset process, the diffused Ag+ ions migrate back towards top electrode due to the electrochemical and joule-heating assisted rupture of CF in the PVP/HfOx bilayer structure.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid State Ionics - Volume 325, 1 November 2018, Pages 196-200
Journal: Solid State Ionics - Volume 325, 1 November 2018, Pages 196-200
نویسندگان
Ishan Varun, Deepak Bharti, Ajay Kumar Mahato, Vivek Raghuwanshi, Shree Prakash Tiwari,