کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
11016444 | 1777112 | 2018 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
A new method for estimating the conductive filament temperature in OxRAM devices based on escape rate theory
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی کامپیوتر
سخت افزارها و معماری
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چکیده انگلیسی
Because of the atomic nature of the system under study, an estimation of the temperature of the conductive filament (CF) in OxRAM devices as a function of the applied bias can only be obtained by means of indirect methods, usually electrothermal simulations. In this paper, a heuristic approach that combines time-dependent dielectric breakdown (TDDB) statistics for the electroformed device with field and temperature-assisted ionic transport within the framework of escape rate theory is presented. Extended expressions for the time-to-failure acceleration law (E-model) and for the Kramers' rate compatible both with the standard models at moderate/high biases and with the principle of detailed balance at equilibrium are proposed. An approximate expression for the CF temperature is reported. For the investigated stress voltage range (0.30â¯V-0.65â¯V), the estimated CF temperature at the SET condition is found to be in the range 350â¯K-600â¯K.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Reliability - Volumes 88â90, September 2018, Pages 142-146
Journal: Microelectronics Reliability - Volumes 88â90, September 2018, Pages 142-146
نویسندگان
A. Rodriguez-Fernandez, J. Muñoz-Gorriz, J. Suñé, E. Miranda,