Keywords: شکست اکسید; Fast wafer level reliability; Oxide breakdown; Negative bias temperature instability; Electromigration; Ring oscilator; Test structures; Plasma induced charging damage; Hot carrier stress; Well charging; Reliability monitoring;
مقالات ISI شکست اکسید (ترجمه نشده)
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Keywords: شکست اکسید; Holmium titanium oxide; Resistive switching; Oxide breakdown;
Keywords: شکست اکسید; MIM; Oxide breakdown; Resistive switching; Memristor; RRAM; TiO2;
A new method for estimating the conductive filament temperature in OxRAM devices based on escape rate theory
Keywords: شکست اکسید; Resistive switching; Oxide breakdown; Memristor; OxRAM;
Spatial analysis of failure sites in large area MIM capacitors using wavelets
Keywords: شکست اکسید; Oxide breakdown; Reliability; MIM; Spatial statistics;
Influence of gate oxides with high thermal conductivity on the failure distribution of InGaAs-based MOS stacks
Keywords: شکست اکسید; Oxide breakdown; Progressive breakdown; High-k dielectrics; III–V MOS devices
Breakdown time statistics of successive failure events in constant voltage-stressed Al2O3/HfO2 nanolaminates
Keywords: شکست اکسید; MIS; Reliability; Poisson process; Oxide breakdown;
Resistive switching effect on Al2O3/InGaAs stacks
Keywords: شکست اکسید; High-k dielectrics; Resistive switching; Oxide breakdown;
Modeling of the output characteristics of advanced n-MOSFETs after a severe gate-to-channel dielectric breakdown
Keywords: شکست اکسید; Oxide breakdown; MOSFET; Oxide reliability; MOS;
Initial leakage current related to extrinsic breakdown in HfO2/Al2O3 nanolaminate ALD dielectrics
Keywords: شکست اکسید; Oxide breakdown; High-K dielectrics; Oxide reliability
Analysis of gate oxide damage by ultraviolet light during oxide deposition in high density plasma
Keywords: شکست اکسید; UV radiation damages; Leakage current; Simple plasma damage monitor; Reliability; Oxide breakdown
Reliability analysis of MOS varactor in CMOS LC VCO
Keywords: شکست اکسید; Reliability; Voltage-controlled oscillator (VCO); Phase noise; Positive-bias temperature instability (PBTI); Channel hot electron (CHE); Oxide breakdown;
Analysis and simulation of the post-breakdown leakage current in electrically stressed TiO2/SiO2 gate stacks
Keywords: شکست اکسید; MOS; High-κ; Reliability; Oxide breakdown
Contributions of the gate current and channel current variation to the post-breakdown MOSFET performance
Keywords: شکست اکسید; CMOS; Dielectric breakdown; Oxide breakdown; Hard breakdown; Oxide reliability; Circuit reliability
MOSFET output characteristics after oxide breakdown
Keywords: شکست اکسید; Dielectric breakdown; Oxide reliability; Leakage currents; Oxide breakdown; Hard breakdown; MOSFET; CMOS; Circuit simulation