کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1668087 1008863 2011 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Analysis of gate oxide damage by ultraviolet light during oxide deposition in high density plasma
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
Analysis of gate oxide damage by ultraviolet light during oxide deposition in high density plasma
چکیده انگلیسی

The UV-induced damages to the gate oxide in a commercially available high-density-plasma dielectric oxide deposition system for the ultra-large integrated circuit fabrication process were analyzed systematically using the metal-oxide-semiconductor capacitors with different antenna ratio. UV-induced damages exclusively in the gate oxide were evaluated by depositing 2500 Å thick oxide layer only once and twice on the two wafers separately and comparing the two results: the deposition of the oxide layer of only 2500 Å did not cause any degradation in the SPDM wafer while the double deposition revealed antenna-ratio dependent shift of the breakdown voltage. The deviation of the values of breakdown voltage of the damaged wafer from its normal ones was found mainly at the center of the wafer where the intensity of the UV light is generally higher in the inductively coupled plasma source.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 519, Issue 20, 1 August 2011, Pages 6645–6648
نویسندگان
, , , , , , ,