کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
11016471 | 1777112 | 2018 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Metallization defect detection in 3D integrated components using scanning acoustic microscopy and acoustic simulations
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی کامپیوتر
سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
In the context of More than Moore 3D integration concepts, the μm to nm sized failure detection and analysis represents a highly demanding task. In this work, micron sized artificially induced metallization defects in open TSVs are detected by scanning acoustic microscopy (SAM). Micro X-ray computed tomography (μXCT) and scanning electron microscopy (SEM) are used to validate the SAM results. Notably, the SAM results show that the failures for certain TSVs are located at a different position as illustrated by μXCT and SEM. In order to interpret these controversial results, 2D elastodynamic finite integration technique (EFIT) simulations are performed. We discuss the results by taking the excitation of surface acoustic waves (SAWs) or Rayleigh waves into account which are leading to characteristic interference patterns within the TSV. The simulation and understanding of such interference effects can be highly beneficial for the use of SAM with respect to modern failure detection and analyses.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Reliability - Volumes 88â90, September 2018, Pages 262-266
Journal: Microelectronics Reliability - Volumes 88â90, September 2018, Pages 262-266
نویسندگان
Eva Kozic, René Hammer, Jördis Rosc, Bernhard Sartory, Joerg Siegert, Franz Schrank, Roland Brunner,