کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1136844 | 1489171 | 2010 | 8 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Universality in electron–modulated-acoustic-phonon interactions in a free-standing semiconductor nanowire
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
کنترل و سیستم های مهندسی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Universality in electron–modulated-acoustic-phonon interactions in a free-standing semiconductor nanowire Universality in electron–modulated-acoustic-phonon interactions in a free-standing semiconductor nanowire](/preview/png/1136844.png)
چکیده انگلیسی
Modulated acoustic phonons and their interactions with electrons in a free-standing cylindrical semiconductor nanowire are investigated theoretically. It is shown that the form factor is a key quantity in discussing the impact of acoustic phonons on electron transport. The form factor calculated using modulated acoustic phonons is identical to that calculated using bulk phonons for a large phonon wave vector along the wire, whereas it is larger for a small phonon wave vector. This increase directly leads to an increase in the electron scattering rate and a reduction in mobility. In addition, the form factor increase has a universality independent of the wire material and radius.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Mathematical and Computer Modelling - Volume 51, Issues 7–8, April 2010, Pages 880–887
Journal: Mathematical and Computer Modelling - Volume 51, Issues 7–8, April 2010, Pages 880–887
نویسندگان
Junichi Hattori, Shigeyasu Uno, Nobuya Mori, Kazuo Nakazato,