Keywords: دروازه تمام اطراف; Carbon nanotube transistor; Complementary logic gate; Gate-all-around; Ballistic regime;
مقالات ISI دروازه تمام اطراف (ترجمه نشده)
مقالات زیر هنوز به فارسی ترجمه نشده اند.
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در صورتی که به ترجمه آماده هر یک از مقالات زیر نیاز داشته باشید، می توانید سفارش دهید تا مترجمان با تجربه این مجموعه در اسرع وقت آن را برای شما ترجمه نمایند.
Keywords: دروازه تمام اطراف; Gate-all-around; MOSFET; Polycrystalline silicon; Si-nanowires; CMOS technology
Performance of ring oscillators composed of gate-all-around FETs with varying numbers of nanowire channels using TCAD simulation
Keywords: دروازه تمام اطراف; Gate-all-around; Field-effect-transistor; Nanowire; Ring oscillator; Transient simulation;
Detailed characterisation of Si Gate-All-Around Nanowire MOSFETs at cryogenic temperatures
Keywords: دروازه تمام اطراف; Gate-All-Around; SOI MOSFET; Nanowire; Cryogenic temperature; Short channel effects; Analog parameters; Quantum transport; Low frequency noise; Noise spectroscopy;
Comparison of work function variation between FinFET and 3D stacked nanowire FET devices for 6-T SRAM reliability
Keywords: دروازه تمام اطراف; Work function variation; Threshold voltage fluctuation; Gate-all-around; FinFET; 3D stacked NWFET; 6-T SRAM; Read static noise margin;
Sub-15 nm gate-all-around field effect transistors on vertical silicon nanowires
Keywords: دروازه تمام اطراف; 3D transistors; Nanowire; Gate-all-around; MOS scaling;
A compact explicit DC model for short channel Gate-All-Around junctionless MOSFETs
Keywords: دروازه تمام اطراف; Gate-All-Around; Cylindrical; MOSFET; Junctionless; Drain current; Compact model; Short channel;
Design optimization of vertical nanowire tunneling field-effect transistor based on AlGaSb/InGaAs heterojunction layer
Keywords: دروازه تمام اطراف; Tunneling field-effect transistors; Low-standby power; AlGaSb/InGaAs; Broken energy-bandgap; Gate-all-around
Experimental demonstration of strained Si nanowire GAA n-TFETs and inverter operation with complementary TFET logic at low supply voltages
Keywords: دروازه تمام اطراف; Si nanowire TFET; Analog performance; Gate-all-around; Inverter; C-TFET; Subthreshold slope;
Low power SRAM design for 14 nm GAA Si-nanowire technology
Keywords: دروازه تمام اطراف; Gate-all-around; Si-nanowire FET; SRAM cell
Trans-capacitance modeling in junctionless gate-all-around nanowire FETs
Keywords: دروازه تمام اطراف; AC analysis; Trans-capacitance; Compact model; Gate-all-around; Nanowire; Junctionless
Electron mobility extraction in triangular gate-all-around Si nanowire junctionless nMOSFETs with cross-section down to 5 nm
Keywords: دروازه تمام اطراف; Si nanowire; Gate-all-around; Mobility extraction; Corner effect; Junctionless; TCAD Sentaurus Device simulation
Modeling of electrostatics and drain current in nanoscale quadruple-gate MOSFET using conformal mapping techniques
Keywords: دروازه تمام اطراف; Gate-all-around; Quadruple-gate; Square-gate; Multigate devices; Conformal mapping; Leakage current
3D gate-all-around bandgap-engineered SONOS flash memory in vertical silicon pillar with metal gate
Keywords: دروازه تمام اطراف; Bandgap-engineered SONOS; BE-SONOS; Gate-all-around; Flash memory; Vertical silicon pillar; Nitride trapping memory
Electrical characteristics of a vertically integrated field-effect transistor using non-intentionally doped Si nanowires
Keywords: دروازه تمام اطراف; Vertical silicon nanowire; Electrical characterization; Gate-All-Around; Field-Effect Transistors
Modeling of program, erase and retention characteristics of charge-trap gate all around memories
Keywords: دروازه تمام اطراف; Non-volatile memory; Gate-All-Around; Geometrical effect; Cylinder; Nanocrystals; SONOS
Gate-all-around technology: Taking advantage of ballistic transport?
Keywords: دروازه تمام اطراف; Gate-all-around; Ballisticity; Limiting velocity; Parasitic capacitance; Effective current; DIBL; Short channel effects; Circuits
Universality in electron–modulated-acoustic-phonon interactions in a free-standing semiconductor nanowire
Keywords: دروازه تمام اطراف; Acoustic phonon; Electron–phonon interaction; Gate-all-around; Electron mobility
3D nanowire gate-all-around transistors: Specific integration and electrical features
Keywords: دروازه تمام اطراف; Gate-all-around; 3D; Nanowire; Mobility
Harmonic distortion analysis of double gate graded-channel MOSFETs operating in saturation
Keywords: دروازه تمام اطراف; Silicon-on-insulator; Channel engineering; Graded-channel; Double gate; Gate-all-around; Asymmetric MOSFET; Harmonic distortion; Non-linearity
Modeling, verification and comparison of short-channel double gate and gate-all-around MOSFETs
Keywords: دروازه تمام اطراف; 85.30.DeMOSFET; Double gate; Gate-all-around; 2D modeling; Conformal mapping
Multiple gate devices: advantages and challenges
Keywords: دروازه تمام اطراف; Multiple gate transistors; Double-gate; FinFET; Gate-all-around; MOSFET scaling;