Modeling of electrostatics and drain current in nanoscale quadruple-gate MOSFET using conformal mapping techniques

An analytical model of electrostatics and drain current for quadruple-gate MOSFET operating in the subthreshold regime is presented. The model is based on conformal mapping techniques and it captures the 3D electrostatics in the device body. We basically solve the electrostatics for practically undoped body, and thus both depletion charges and free charge carriers are neglected, thus allowing us to solve the Laplace equation in the subthreshold regime. We extend 2D conformal mapping techniques to the 3D device using appropriate scaling lengths. The obtained model has been verified by 3D numerical simulations from the ATLAS device simulator by Silvaco.

► We model the quadruple-gate MOSFET operating in the subthreshold regime.
► The model is analytical and based on conformal mapping techniques.
► A correction in the scaling factor is presented.
► Results are in good agreement with the numerical simulations.