کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
5010282 1462202 2017 9 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
A compact explicit DC model for short channel Gate-All-Around junctionless MOSFETs
موضوعات مرتبط
مهندسی و علوم پایه سایر رشته های مهندسی مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
A compact explicit DC model for short channel Gate-All-Around junctionless MOSFETs
چکیده انگلیسی
In this paper we provide solutions to update a long channel model in order to take into account the short channel effects. The presented model is for the junctionless GAA MOSFETs. The resulting model is analytical, explicit and valid for depletion and accumulation regimes, and consists of simple physically based equations, for better understanding of this device, and also easier implementation and better computation speed as a compact model. The agreement with TCAD simulations is very good.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid-State Electronics - Volume 131, May 2017, Pages 24-29
نویسندگان
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