Sub-15 nm gate-all-around field effect transistors on vertical silicon nanowires

- Vertical silicon nanowire technology with a high degree of process control (short gate length of 14 nm).
- DC and LFN characterization of such a device.
- First proof of concept of CMOS inverters based on scaled vertical silicon nanowire architecture.
- Demonstration of multi-threshold voltage platform based on multiple NW diameter devices.

A vertical MOS architecture implemented on Si nanowire (NW) array with a scaled Gate-All-Around (14 nm) and symmetrical diffusive S/D contacts is presented with noteworthy demonstrations in both processing (layer engineering at nanoscale), and in electrical properties (high electrostatic control, low defect level, multi-Vt platform). Furthermore, the versatility and reliability of this technology is evidenced with a CMOS inverter, providing bright perspectives for ultimate scaling.