کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
12039524 | 1007993 | 2019 | 13 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Fabrication of a Ti-substituted CuGaS2 intermediate band material by alternate sputtering
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Fabrication of a Ti-substituted CuGaS2 intermediate band material by alternate sputtering Fabrication of a Ti-substituted CuGaS2 intermediate band material by alternate sputtering](/preview/png/12039524.png)
چکیده انگلیسی
Ti-substituted CuGaS2 (Ti-CGS) thin film, a well candidate intermediate band (IB) material, has been successfully synthesized via a well synthetic route by alternate sputtering. The results revealed that the film have a compact morphology and are comprised of a crystalline chalcopyrite single phase Ti-CGS. Due to the presentation of Ti atoms, the IBs were introduced and additional sub-band-edge responses were directly observed in absorption spectroscopy. In the Ti-CGS thin film, except an intrinsic band-edge response observed at 510â¯nm ('A', 2.31â¯eV), two distinct sub-band-edge responses are observed at 856â¯nm ('B', 1.45â¯eV) and 1418â¯nm ('D', 0.87â¯eV). Besides, one weak sub-band-edge responses are found at 1102â¯nm ('C', 1.13â¯eV), which is in accord with theoretical prediction. The present report might provide a promising fabrication process for discovering the multiple IBs in the Ti-CGS film.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Letters - Volume 236, 1 February 2019, Pages 23-25
Journal: Materials Letters - Volume 236, 1 February 2019, Pages 23-25
نویسندگان
Wen-Liang Fan, Hai-Yan Yao, Yan-Lai Wang, Shi-Liang Ban,