Successive ion layer adsorption and reaction (SILAR) technique synthesis of Al(III)–8-hydroxy-5-nitrosoquinolate nano-sized thin films: Characterization and factors optimization

Nano Al(III)–8-hydroxy-5-nitrosoquinolate [Al(III)–(HNOQ)3] thin films were synthesized by the rapid, direct, simple and efficient successive ion layer adsorption and reaction (SILAR) technique. Thin film formation optimized factors were evaluated. Stoichiometry and structure were confirmed by elemental analysis and FT-IR. The particle size (27–71 nm) was determined using scanning electron microscope (SEM). Thermal stability and thermal parameters were determined by thermal gravimetric analysis (TGA). Optical properties were investigated using spectrophotometric measurements of transmittance and reflectance at normal incidence. Refractive index, n, and absorption index, k, were determined. Spectral behavior of the absorption coefficient in the intrinsic absorption region revealed a direct allowed transition with 2.45 eV band gap. The current–voltage (I–V) characteristics of [Al(III)–(HNOQ)3]/p–Si heterojunction was measured at room temperature. The forward and reverse I–V characteristics were analyzed. The calculated zero-bias barrier height (Φb) and ideality factor (n) showed strong bias dependence. Energy distribution of interface states (Nss) was obtained.

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► SILAR technique was used to assemble thin films of nano [Al(III)–(HNOQ)3] complex.
► SEM images indicate a particle size of 27–71 nm.
► Thin film formation optimized factors were studied.
► [Al(III)–(HNOQ)3] thin films showed direct allowed transition, Eg = 2.45 eV.
► Ideality factor and barrier height of the heterojunction is voltage bias dependent.