Thin film assembly of nano-sized Zn(II)-8-hydroxy-5,7-dinitroquinolate by using successive ion layer adsorption and reaction (SILAR) technique: Characterization and optical–electrical–photovoltaic properties

A method is described for thin film assembly of nano-sized Zn(II)-8-hydroxy-5,7-dinitroquinolate complex, Zn[((NO2)2-8HQ)2] by using successive ion layer adsorption and reaction (SILAR) technique. Highly homogeneous assembled nano-sized metal complex thin films with particle size distribution in the range 27–47 nm was identified by using scanning electron microscopy (SEM). Zn[((NO2)2-8HQ)2] and [(NO2)2-8HQ] ligand were studied by thermal gravimetric analysis (TGA). Graphical representation of temperature dependence of the dark electrical conductivity produced two distinct linear parts for two activation energies at 0.377 eV and 1.11 eV. The analysis of the spectral behavior of the absorption coefficient in the intrinsic absorption region reveals a direct allowed transition with a fundamental band gap of 2.74 eV. The dark current density–voltage (J–V) characteristics showed the rectification effect due to the formation of junction barrier of Zn[((NO2)2-8HQ)2] complex film/n-Si interface. The photocurrent in the reverse direction is strongly increased by photo-illumination and the photovoltaic characteristics were also determined and evaluated.

Thin film assembly of nano-sized Zn(II)-8-hydroxy-5,7-dinitroquinolate complex, Zn[((NO2)2-8HQ)2] by using successive ion layer adsorption and reaction (SILAR) technique is presented. The spectral, optical, electrical and photovoltaic properties are described.Figure optionsDownload as PowerPoint slideHighlights
► SILAR technique was used for assembly of nano-sized Zn[((NO2)2-8HQ)2].
► The particle size was identified in the range ∼27–47 nm.
► The spectral behavior reveals an energy gap 2.74 eV.
► The electrical and photovoltaic properties of a complex device were investigated.
► Zn[((NO2)2-8HQ)2] was proved as a good candidate for photovoltaic device.