A single red InGaN-based light-emitting diode with a europium (III) ternary complex as mono-phosphor

A novel europium (III) ternary complex, Eu(TPBDTFA)3Phen, was designed and synthesized. Photoluminescence measurements show that the energy absorbed by the organic ligands was efficiently transferred to the central Eu3+ ions, and the complex exhibits strongly red emission due to the 5D0-7Fj transitions of Eu3+ ions with appropriate CIE (Commission Internationale de l'Eclairage, International Commission on Illumination) chromaticity coordinates (x = 0.66, y = 0.33) under 310-420 nm light excitation. The luminescence quantum yield for the Eu3+ complex is 0.18. Thermogravimetric analysis (TGA) confirms a high thermal stability of the complex with a decomposition temperature of 341 °C. All the characteristics indicate that the Eu3+ complex is a highly efficient red phosphor suitable to be excited by near UV light. An intense red-emitting LED was fabricated by combining the mono-phosphor Eu(TPBDTFA)3Phen with a ∼395 nm emitting InGaN chip.