The transition from bipolaron to triplet-polaron magnetoresistance in a single layer organic semiconductor device

• Change in magneto-conductance with drive conditions in a P3HT device.
• Organic Magnetoresistance (OMR) explained by a combination of bipolaron and triplet-polaron mechanism.
• Charge carrier density, triplet density and electroluminescence confirming transition to triplet-polaron based mechanism.

We measure the current–voltage–luminescence (I–V–L) and Magneto-Conductance (MC) response of a poly(3-hexyl-thiophene) (P3HT) based device (Au/P3HT(300 nm)/Al) in forward and reverse bias. In reverse bias (<1 V), the negative MC is described by a single non-Lorentzian function, consistent with the bipolaron theory. In forward bias, the transition from negative saturation MC (low bias) to positive saturation MC (high bias) occurs when the current density exceeds ∼10−2 A cm−2 and coincides with electroluminescence. Under these conditions the triplet density (∼1015 cm−3) becomes comparable to the hole density (∼1016 cm−3), consistent with the triplet-polaron interaction theory. From the current density dependence of the MC we conclude that in forward bias both mechanisms must be occurring simultaneously, within a given device, and that the overall sign of the MC results from competition between the two mechanisms.

In a single Au/P3HT(300 nm)/Al device under varying forward bias, a transition from negative high field (>100 mT) Magneto-Conductance (MC) to positive high field MC occurs when the current density exceeds ∼10−2 A cm−2 (red symbols – forward bias, black symbols – reverse bias, left hand axis). The transition coincides with the onset of electroluminescence (blue symbols, right hand axis).Figure optionsDownload as PowerPoint slide