THz-wave absorption by field-induced carriers in pentacene thin-film transistors for THz imaging sensors

Innovative sensing systems based on THz electromagnetic waves have been attracting a great deal of attention. Although many THz detectors have been developed over the years, it is currently difficult to manufacture low-cost THz sensing/imaging devices. In the present study, we propose to use organic field-effect transistors (OFETs) and small potential fluctuation against the carriers within them (N. Ohashi, H. Tomii, R. Matsubara, M. Sakai, K. Kudo, M. Nakamura, Appl. Phys. Lett. 91 (2007) 162105). We use THz time-domain spectroscopy for OFETs in which the carrier density in the pentacene active layer is modulated by the gate bias. We found evidence that the accumulated free holes in pentacene films can be excited by THz photons to overcome the surrounding barriers in the fluctuating potential. The Drude–Lorentz model could not account for the shape of the absorption spectra, which suggests that the holes are weakly restricted by the potential fluctuation. The integrated absorption intensity was proportional to the transfer characteristics of the OFETs. The present findings represent an important step toward developing a new class of THz-wave sensors.

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► THz absorption spectra of electric-field-induced holes in pentacene are obtained.
► They exhibit a different spectral shape from those of free electrons in silicon.
► Holes in pentacene films will be weakly restricted by HOMO-band-edge fluctuation.
► THz photons excite the holes to overcome the surrounding potential barriers.
► This work represents an important step to develop a novel THz-wave imaging device.